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Abstract An unusual class of equal massp-wave universal trimers with symmetry $L^{\mathrm{\Pi }}=1^{\pm }$is identified, for both a two-component fermionic trimer withs- andp-wave scattering length close to unitarity and for a one-component fermionic trimer atp-wave unitarity. Moreover, fermionic trimers made of atoms with two internal spin components are found for $L^{\mathrm{\Pi }}=1^{\pm }$, when thep-wave interaction between spin-up and spin-down fermions is close to unitarity and/or when the interaction between two spin-up fermions is close to thep-wave unitary limit. The universality of thesep-wave universal trimers is tested here by considering van der Waals interactions in a Lennard–Jones potential with different numbers of two-body bound states; our calculations also determine the value of the scattering volume or length where the trimer state hits zero energy and can be observed as a recombination resonance. The faux-Efimov effect appears with trimer symmetry $L^{\mathrm{\Pi }}=1^{-}$when the two fermion interactions are close top-wave unitarity and the lowest $1/R^2$coefficient gets modified, thereby altering the usual Wigner threshold law for inelastic processes involving three-body continuum channels. 

Polarization-induced two-dimensional electron gases (2DEGs) in AlN/GaN/AlN quantum well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising route to advance microwave and power electronics with nitride semiconductors. The electron mobility in thin GaN quantum wells embedded in AlN is limited by high internal electric field and the presence of undesired polarization-induced two-dimensional hole gases (2DHGs). To enhance the electron mobility in such heterostructures on AlN, previous efforts have resorted to thick, relaxed GaN channels with dislocations. In this work, we introduce n-type compensation δ-doping in a coherently strained single-crystal (Xtal) AlN/GaN/AlN heterostructure to counter the 2DHG formation at the GaN/AlN interface, and simultaneously lower the internal electric field in the well. This approach yields a δ-doped XHEMT structure with a high 2DEG density of ∼3.2×1013 cm−2 and a room temperature (RT) mobility of ∼855 cm2/Vs, resulting in the lowest RT sheet resistance 226.7 Ω/□ reported to date in coherently strained AlN/GaN/AlN HEMT heterostructures on the AlN platform. 

We report the growth of AlBN/β‐Nb₂N nitride epitaxial heterostructures in which the AlBN is ferroelectric, and β‐Nb₂N with metallic resistivity ≈40 μ at 300 K becomes superconducting belowT_C ≈ 0.5 K. Using nitrogen plasma molecular beam epitaxy, we grow hexagonal β‐Nb₂N films on c‐plane Al₂O₃substrates, followed by wurtzite AlBN. The AlBN is in epitaxial registry and rotationally aligned with the β‐Nb₂N, and the hexagonal lattices of both nitride layers make angles of 30° with the hexagonal lattice of the Al₂O₃substrate. The B composition of the AlBN layer is varied from 0 to 14.7%. It is found to depend weakly on the B flux, but increases strongly with decreasing growth temperature, indicating a reaction rate‐controlled growth. The increase in B content causes a non‐monotonic change in the a‐lattice constant and a monotonic decrease in the c‐lattice constant of AlBN. Sharp, abrupt epitaxial AlBN/β‐Nb₂N/Al₂O₃heterojunction interfaces and close symmetry matching are observed by transmission electron microscopy. The observation of ferroelectricity and superconductivity in epitaxial nitride heterostructures opens avenues for novel electronic and quantum devices. 

To enhance the electron mobility in quantum-well high-electron-mobility transistors (QW HEMTs), we investigate the transport properties in AlN/GaN/AlN heterostructures on Al-polar single-crystal AlN substrates. Theoretical modeling combined with experiment shows that interface roughness scattering due to high electric field in the quantum well limits mobility. Increasing the width of the quantum well to its relaxed form reduces the internal electric field and scattering, resulting in a binary QW HEMT with a high two-dimensional electron gas (2DEG) density of 3.68×1013 cm–2, a mobility of 823 cm2/Vs, and a record-low room temperature (RT) sheet resistance of 206 Ω/□. Further reduction of the quantum well electric field yields a 2DEG density of 2.53×1013 cm–2 and RT mobility > 1000 cm2/V s. These findings will enable future developments in high-voltage and high-power microwave applications on the ultrawide bandgap AlN substrate platform. 

Unlike naturally occurring oxide crystals such as ruby and gemstones, there are no naturally occurring nitride crystals because the triple bond of the nitrogen molecule is one of the strongest bonds in nature. Here, we report that when the transition metal scandium is subjected to molecular nitrogen, it self-catalyzes to break the nitrogen triple bond to form highly crystalline layers of ScN, a semiconductor. This reaction proceeds even at room temperature. Self-activated ScN films have a twin cubic crystal structure, atomic layering, and electronic and optical properties comparable to plasma-based methods. We extend our research to showcase Sc’s scavenging effect and demonstrate self-activated ScN growth under various growth conditions and on technologically significant substrates, such as 6H–SiC, AlN, and GaN. Ab initio calculations elucidate an energetically efficient pathway for the self-activated growth of crystalline ScN films from molecular N2. The findings open a new pathway to ultralow-energy synthesis of crystalline nitride semiconductor layers and beyond. 

Stimulated Raman scattering is ubiquitous in many high-intensity laser environments. Parametric four-wave mixing between the pump and Raman sidebands can affect the Raman gain, but stringent phase matching requirements and strongly nonlinear dynamics obscure clear understanding of its effects at high laser powers. Here we investigate four-wave mixing in the presence of strong self-focusing and weak ionization at laser powers above the Kerr critical power. Theoretical analysis shows that the plasma generated at focus naturally leads to phase matching conditions suitable for enhanced Raman gain, almost without regard to the initial phase mismatch. Multidimensional nonlinear optical simulations with multiphoton and collisional ionization confirm the enhancement and suggest that it may lead to significantly higher Raman losses in some high-intensity laser environments.